IndiumV2, Main, Exploration, bibRecord, 001931

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.

Identifieur interne : 001931 ( Main/Exploration ); précédent : 001930; suivant : 001932

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.

Auteurs : RBID : pubmed:20174003

English descriptors

KwdEn :
- Arsenicals (chemistry), Arsenicals (radiation effects), Equipment Design, Equipment Failure Analysis, Gallium (chemistry), Gallium (radiation effects), Indium (chemistry), Indium (radiation effects), Light, Photometry (instrumentation), Refractometry (instrumentation), Semiconductors, Silicon (chemistry), Systems Integration.
MESH :
- chemical , chemistry : Arsenicals, Gallium, Indium, Silicon.
- chemical , radiation effects : Arsenicals, Gallium, Indium.
- instrumentation : Photometry, Refractometry.
- Equipment Design, Equipment Failure Analysis, Light, Semiconductors, Systems Integration.

Abstract

InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.

PubMed: 20174003

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Le document en format XML

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<author><name sortKey="Sheng, Zhen" uniqKey="Sheng Z">Zhen Sheng</name>
<affiliation wicri:level="1"><nlm:affiliation>INTEC Department, Photonics Research Group, Ghent University-IMEC, Gent, Belgium. sheng.zhen@intec.ugent.be</nlm:affiliation>
<country xml:lang="fr">Belgique</country>
<wicri:regionArea>INTEC Department, Photonics Research Group, Ghent University-IMEC, Gent</wicri:regionArea>
</affiliation>
</author>
<author><name sortKey="Liu, Liu" uniqKey="Liu L">Liu Liu</name>
</author>
<author><name sortKey="Brouckaert, Joost" uniqKey="Brouckaert J">Joost Brouckaert</name>
</author>
<author><name sortKey="He, Sailing" uniqKey="He S">Sailing He</name>
</author>
<author><name sortKey="Van Thourhout, Dries" uniqKey="Van Thourhout D">Dries Van Thourhout</name>
</author>
</titleStmt>
<publicationStmt><date when="2010">2010</date>
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<idno type="pmid">20174003</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term>
<term>Arsenicals (radiation effects)</term>
<term>Equipment Design</term>
<term>Equipment Failure Analysis</term>
<term>Gallium (chemistry)</term>
<term>Gallium (radiation effects)</term>
<term>Indium (chemistry)</term>
<term>Indium (radiation effects)</term>
<term>Light</term>
<term>Photometry (instrumentation)</term>
<term>Refractometry (instrumentation)</term>
<term>Semiconductors</term>
<term>Silicon (chemistry)</term>
<term>Systems Integration</term>
</keywords>
<keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term>
<term>Gallium</term>
<term>Indium</term>
<term>Silicon</term>
</keywords>
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<term>Gallium</term>
<term>Indium</term>
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<keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Photometry</term>
<term>Refractometry</term>
</keywords>
<keywords scheme="MESH" xml:lang="en"><term>Equipment Design</term>
<term>Equipment Failure Analysis</term>
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<front><div type="abstract" xml:lang="en">InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.</div>
</front>
</TEI>
<pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">20174003</PMID>
<DateCreated><Year>2010</Year>
<Month>02</Month>
<Day>22</Day>
</DateCreated>
<DateCompleted><Year>2010</Year>
<Month>05</Month>
<Day>24</Day>
</DateCompleted>
<DateRevised><Year>2013</Year>
<Month>11</Month>
<Day>21</Day>
</DateRevised>
<Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN>
<JournalIssue CitedMedium="Internet"><Volume>18</Volume>
<Issue>2</Issue>
<PubDate><Year>2010</Year>
<Month>Jan</Month>
<Day>18</Day>
</PubDate>
</JournalIssue>
<Title>Optics express</Title>
<ISOAbbreviation>Opt Express</ISOAbbreviation>
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<ArticleTitle>InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.</ArticleTitle>
<Pagination><MedlinePgn>1756-61</MedlinePgn>
</Pagination>
<ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.18.001756</ELocationID>
<Abstract><AbstractText>InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.</AbstractText>
</Abstract>
<AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Sheng</LastName>
<ForeName>Zhen</ForeName>
<Initials>Z</Initials>
<Affiliation>INTEC Department, Photonics Research Group, Ghent University-IMEC, Gent, Belgium. sheng.zhen@intec.ugent.be</Affiliation>
</Author>
<Author ValidYN="Y"><LastName>Liu</LastName>
<ForeName>Liu</ForeName>
<Initials>L</Initials>
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<Author ValidYN="Y"><LastName>Brouckaert</LastName>
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<ForeName>Sailing</ForeName>
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<Author ValidYN="Y"><LastName>Van Thourhout</LastName>
<ForeName>Dries</ForeName>
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<Language>eng</Language>
<PublicationTypeList><PublicationType>Journal Article</PublicationType>
<PublicationType>Research Support, Non-U.S. Gov't</PublicationType>
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<MedlineJournalInfo><Country>United States</Country>
<MedlineTA>Opt Express</MedlineTA>
<NlmUniqueID>101137103</NlmUniqueID>
<ISSNLinking>1094-4087</ISSNLinking>
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<ChemicalList><Chemical><RegistryNumber>0</RegistryNumber>
<NameOfSubstance>Arsenicals</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>045A6V3VFX</RegistryNumber>
<NameOfSubstance>Indium</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>1303-00-0</RegistryNumber>
<NameOfSubstance>gallium arsenide</NameOfSubstance>
</Chemical>
<Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber>
<NameOfSubstance>Gallium</NameOfSubstance>
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<Chemical><RegistryNumber>Z4152N8IUI</RegistryNumber>
<NameOfSubstance>Silicon</NameOfSubstance>
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<MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName>
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<QualifierName MajorTopicYN="N">radiation effects</QualifierName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName>
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<MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName>
<QualifierName MajorTopicYN="Y">chemistry</QualifierName>
<QualifierName MajorTopicYN="N">radiation effects</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName>
<QualifierName MajorTopicYN="Y">chemistry</QualifierName>
<QualifierName MajorTopicYN="N">radiation effects</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Light</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Photometry</DescriptorName>
<QualifierName MajorTopicYN="Y">instrumentation</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Refractometry</DescriptorName>
<QualifierName MajorTopicYN="Y">instrumentation</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Silicon</DescriptorName>
<QualifierName MajorTopicYN="Y">chemistry</QualifierName>
</MeshHeading>
<MeshHeading><DescriptorName MajorTopicYN="N">Systems Integration</DescriptorName>
</MeshHeading>
</MeshHeadingList>
</MedlineCitation>
<PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2010</Year>
<Month>2</Month>
<Day>23</Day>
<Hour>6</Hour>
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<PubMedPubDate PubStatus="medline"><Year>2010</Year>
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<PublicationStatus>ppublish</PublicationStatus>
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</record>

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InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Pour générer des pages wiki